The MJE13003 offers several notable features, including high voltage tolerance, rapid switching speed, and low saturation voltage. These attributes make the MJE13003 an ideal choice for use in high-frequency circuits and power supply modules.
Description
- 50 Pack MJE13003 Transistor
Features
- Reverse Biased SOA with Inductive Loads @ TC = 100? C
- Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100 ° C
- tc @ 1 A, 100 ° C is 290 ns (Typ)
- 700 V Blocking Capability
- SOA and Switching Applications Information
Specification
- Type: TO-126
- Collector-emitter voltage (VBE = 0) 700 V
- VCEO Collector-emitter voltage (IB = 0) 400 V
- VEBO Emitter-base voltage (IC = 0, IB = 0.75 A, tP < 10 μs) V(BR)EBO V
- IC Collector current 1.5 A
- ICM Collector peak current (tP < 5 ms) 3 A
- IB Base current 0.75 A
- IBM Base peak current (tP < 5 ms) 1.5 A
- PTOT Total dissipation at TC = 25 °C 40 W
- TSTG Storage temperature -55 to 150 °C
- TJ Operating junction temperature -40 to 150 °C
Package
- 50 x MJE13003 Power Transistors
Applications
- The MJE13003 is widely used in various electronic applications, including power adapters, electronic ballasts, and switching power supplies. Its ability to handle high current and voltage makes it suitable for heavy-duty and industrial applications, ensuring optimal performance and durability.
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